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Transport Properties

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Semiconducting Silicides

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 39))

Abstract

In this chapter we present the effect of external electric and magnetic fields on free carriers in semiconducting silicides. The case of weak fields producing changes in the distribution of electron velocities, which are a small perturbation of the equilibrium distribution, is considered. The behavior of carriers in this case can be described by Ohm’s law. The electrical conductivity σ in an isotropic semiconductor in which both free electrons and free holes contribute to the flow of current, can be expressed as

σ = e(neμe + nhμh) (5.1)

Here e is the electron charge, μ e and μ h are the mobilities of electrons and holes, respectively, and n e and n h are the corresponding charge carrier concentrations. The inverse conductivity 1/σ = ρ is called resistivity. Practically important, σ is closely connected with the fundamental electronic properties of the material, which are n and μ. Thus, the transport properties of an electron gas in a semiconductor can be described most conveniently in terms of these quantities.

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Authors and Affiliations

  1. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus

    Ludmila Ivanenko

  2. Hahn-Meitner-Institute, Berlin, Germany

    Horst Lange

  3. Institute of Solid State and Materials Research Dresden, Dresden, Germany

    Armin Heinrich

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Ivanenko, L., Lange, H., Heinrich, A. (2000). Transport Properties. In: Semiconducting Silicides. Springer Series in Materials Science, vol 39. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-59649-0_5

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