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MOS Fielid-Effect Transistor

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Gate Dielectrics and MOS ULSIs

Part of the book series: Springer Series in Electronics and Photonics ((SSEP,volume 34))

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Abstract

In this chapter, we shall present the MOSFET theory and issues that relate to scaling and integration.

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  1. Kyoto Research Laboratory, Matsushita Electronics, Inc., 19 Nishikujo-Kasugacho, Minami-ku,Kyoto, 601, Japan

    Takashi Hori Ph.D.

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  1. Takashi Hori Ph.D.
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© 1997 Springer-Verlag Berlin Heidelberg

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Hori, T. (1997). MOS Fielid-Effect Transistor. In: Gate Dielectrics and MOS ULSIs. Springer Series in Electronics and Photonics, vol 34. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-60856-8_3

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  • DOI: https://doi.org/10.1007/978-3-642-60856-8_3

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-64587-7

  • Online ISBN: 978-3-642-60856-8

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