Abstract
Transition-metal silcides have been used extensively as contact layers in semiconductor applications [1,2]. These applications are becoming more important as electronic circuit complexity and scale of integration increase.
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Wang, K.L., Storms, H.A. (1979). SIMS Study of Metallized Silicon Semiconductors. In: Benninghoven, A., Evans, C.A., Powell, R.A., Shimizu, R., Storms, H.A. (eds) Secondary Ion Mass Spectrometry SIMS II. Springer Series in Chemical Physics, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-61871-0_34
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DOI: https://doi.org/10.1007/978-3-642-61871-0_34
Publisher Name: Springer, Berlin, Heidelberg
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