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Picosecond Optoelectronic Diagnostics of Field Effect Transistors

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Picosecond Electronics and Optoelectronics

Part of the book series: Springer Series in Electrophysics ((SSEP,volume 21))

Abstract

Picosecond optoelectronics provides the capability to measure the frequency response of solid state devices with much greater bandwidth than conventional techniques. Laser-triggered switches acted as pulse generators and samplers to measure the impulse response of a device with a temporal resolution of a few picoseconds. Fourier analysis of the impulse response functions yields scattering matrix parameters with a frequency bandwidth of 40 GHz or more. In comparison, current frequency-domain technology is limited to a 26 GHz bandwidth. (Higher frequencies can be covered with frequency mixing techniques, at the cost of additional noise and experimental complexity.)

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REFERENCES

  1. Donald E. Cooper, “Picosecond Optoelectronic Measurement of Microstrip Dispersion,” to be published in Appl. Phys. Lett.

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  2. P. R. Smith, D. H. Auston, A. M. Johnson, and W. M. Augustyniak, Appl. Phys. Lett. 38, p. 47 (1981).

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© 1985 Springer-Verlag Berlin Heidelberg

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Cooper, D.E., Moss, S.C. (1985). Picosecond Optoelectronic Diagnostics of Field Effect Transistors. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_11

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  • DOI: https://doi.org/10.1007/978-3-642-70780-3_11

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-70782-7

  • Online ISBN: 978-3-642-70780-3

  • eBook Packages: Springer Book Archive

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