Abstract
The existence of the heterojunction and the recent development of methods for growing a variety of epitaxial ultrathin III–V semiconductor layers (wider-gap or narrower-gap, doped or undoped, abrupt or graded) enables the fabrication of sophisticated quantum-well heterostructures. In the past few years, one of these techniques, metalorganic chemical vapor deposition (MO-CVD), has become increasingly popular as a consequence of its versatility and economy. The chemistry of MO-CVD growth of III–V compounds was pioneered by Manasevit as early as 1968 [1]; however, it was DUPUIS and DAPKUS [2] in 1977 who demonstrated that high quality GaAlAs/GaAs heterostructure lasers can be grown by MO-CVD.
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Burnhan, R.D., Streifer, W., Paoli, T.L., Thornton, R.L., Smith, D.L. (1985). Properties of GaAlAs/GaAs Quantum Well Heterostractures Grown by Metalorganic Chemical Vapor Deposition. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_20
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