Abstract
We determine the effect of electron-electron scattering in semiconductors by solving the Boltzmann equation with an electron-electron collision term that relaxes the distribution to a heated, displaced Maxwellian. The Maxwellian has the same number, average velocity, and average energy as the instantaneous distribution. The effective electron-electron relaxation rate is solved for self-consistently assuming a screened Coulomb interaction. The electron distributions we find are strongly affected by electron-electron scattering, but differ significantly from heated, displaced Maxwellians.
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© 1986 Springer-Verlag Berlin Heidelberg
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Wingreen, N.S., Stanton, C.J., Wilkins, J.W. (1986). The Effect of Electron-Electron Scattering on the Distribution Function in Semiconductors. In: Kelly, M.J., Weisbuch, C. (eds) The Physics and Fabrication of Microstructures and Microdevices. Springer Proceedings in Physics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71446-7_45
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DOI: https://doi.org/10.1007/978-3-642-71446-7_45
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-71448-1
Online ISBN: 978-3-642-71446-7
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