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Growth Kinetics of Silicon Molecular Beam Epitaxy

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Chemistry and Physics of Solid Surfaces VII

Part of the book series: Springer Series in ((SSSUR,volume 10))

Abstract

Modern microelectronics is based on semiconductor materials, which contain differently doped (n- or p-type) regions. An often crucial step for the preparation of the active semiconductor regions is epitaxy, the growth of a thin, oriented single crystalline film on a substrate. Due to its unique combination of properties, silicon is mainly used as semiconductor material for the fabrication of integrated circuits (microchips). The epitaxy technique for today’s mass production utilizes chemical vapour deposition (CVD). But for future device application the method of molecular beam epitaxy (MBE) is emerging, making possible sophisticated device structures with precise submicron structures and heterojunctions. The material properties of the semiconductor itself can be artificially influenced by periodic nanometer structures, so-called superlattices. The integration of this novel class of man-made semiconductors with conventional circuits will improve the performance of microchips and open a wide variety of new applications.

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Authors and Affiliations

  1. AEG Research Center, Sedanstr. 10, D-7900, Ulm, Fed. Rep. Germany

    E. Kasper & H. Jorke

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  1. E. Kasper
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  2. H. Jorke
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Editors and Affiliations

  1. Department of Chemistry and Laboratory for Surface Studies, The University of Wisconsin-Milwaukee, Milwaukee, WI, 53201, USA

    Ralf Vanselow

  2. Department of Chemistry, University of Auckland, Private Bag, Auckland, New Zealand

    Russell Howe

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© 1988 Springer-Verlag Berlin Heidelberg

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Kasper, E., Jorke, H. (1988). Growth Kinetics of Silicon Molecular Beam Epitaxy. In: Vanselow, R., Howe, R. (eds) Chemistry and Physics of Solid Surfaces VII. Springer Series in Surface Sciences , vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-73902-6_20

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  • DOI: https://doi.org/10.1007/978-3-642-73902-6_20

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-73904-0

  • Online ISBN: 978-3-642-73902-6

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