Abstract
MOCVD offers an alternative growth technique for obtaining large abrupt multilayer III-V structures suitable for optoelectronic devices. GaAs/GaA1As heterojunction material has been grown to meet the requirement of a large range of optoelectronic devices including lasers, LEDs, FETs, waveguides and heterojunction bipolar transistors. Assessment techniques have been established and applied to heterojunction material. MOCVD material has been processed into discrete and monolithic optoelectronic devices and the device performance evaluated.
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© 1984 Springer-Verlag Berlin Heidelberg
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Jones, M.W. (1984). MOCVD Growth of GaAlAS/GaAs Heterostructures for Optoelectronic Devices. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems, Heterostructures, and Superlattices. Springer Series in Solid-State Sciences, vol 53. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82311-4_12
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DOI: https://doi.org/10.1007/978-3-642-82311-4_12
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-82313-8
Online ISBN: 978-3-642-82311-4
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