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Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors

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High-Speed Electronics

Part of the book series: Springer Series in Electronics and Photonics ((SSEP,volume 22))

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Abstract

A study of a series of NpN GaAs/InGaAs/GaAs latticestrained heterojunction bipolar transistors, in which the indium mole fraction has been varied, shows that it is possible to obtain good dc current gain and a high cut-off frequency in this materials system despite relatively small band offsets and the presence of interface lattice irregularities.

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References

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Author information

Authors and Affiliations

  1. School of Electrical Engineering, Cornell University, Phillips Hall, Ithaca, NY, 14853, USA

    L. P. Ramberg, P. M. Enquist, Y. K. Chen, F. E. Najjar & L. F. Eastman

  2. Department of Electron Physics I, Chalmers University, S-412 96, Gothenburg, Sweden

    L. P. Ramberg

  3. Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY, 14853, USA

    E. A. Fitzgerald & K. L. Kavanagh

Authors
  1. L. P. Ramberg
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  2. P. M. Enquist
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  3. Y. K. Chen
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  4. F. E. Najjar
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  5. L. F. Eastman
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  6. E. A. Fitzgerald
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  7. K. L. Kavanagh
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Editor information

Editors and Affiliations

  1. RIFA AB, S-163 81, Stockholm, Sweden

    Bengt Källbäck

  2. Institut für Halbleitertechnik, Rhein.-Westf. Technische Hochschule, Sommerfeldstraße, D-5100, Aachen, Fed. Rep. of Germany

    Heinz Beneking

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© 1986 Springer-Verlag Berlin Heidelberg

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Ramberg, L.P. et al. (1986). Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_34

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  • DOI: https://doi.org/10.1007/978-3-642-82979-6_34

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82981-9

  • Online ISBN: 978-3-642-82979-6

  • eBook Packages: Springer Book Archive

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