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Electron-Beam Lithography of Ultra-Submicron Devices

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Physics and Technology of Submicron Structures

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 83))

Abstract

In the ultra-submicron device area, in which individual feature sizes can be as small as a few tens of nanometers and comparable to the inelastic mean free path of the electrons, many novel new concepts arise. These can include ballistic transport and cooperative effects such as Bloch oscillations. In this paper, we discuss the use of high resolution electron-beam lithography for the fabrication of such ultra-submicron devices. The appearance of ballistic transport in MESFETs and of the possible Bloch oscillations in suitably prepared surface superlattices will be discussed.

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References

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Author information

Authors and Affiliations

  1. Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287, USA

    D. K. Ferry, G. Bernstein & Wen-Ping Liu

Authors
  1. D. K. Ferry
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  2. G. Bernstein
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  3. Wen-Ping Liu
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Editor information

Editors and Affiliations

  1. Institut für Experimentalphysik, Universität Linz, A-4040, Linz, Austria

    Helmut Heinrich

  2. Institut für Physik, Montanuniversität Leoben, A-8700, Leoben, Austria

    Günther Bauer

  3. Institut für Festkörperphysik, Universität Wien, A-1090, Wien, Austria

    Friedemar Kuchar

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© 1988 Springer-Verlag Berlin Heidelberg

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Ferry, D.K., Bernstein, G., Liu, WP. (1988). Electron-Beam Lithography of Ultra-Submicron Devices. In: Heinrich, H., Bauer, G., Kuchar, F. (eds) Physics and Technology of Submicron Structures. Springer Series in Solid-State Sciences, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83431-8_4

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  • DOI: https://doi.org/10.1007/978-3-642-83431-8_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-83433-2

  • Online ISBN: 978-3-642-83431-8

  • eBook Packages: Springer Book Archive

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