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The Fractional Quantum Hall Effect with an Added Parallel Magnetic Field

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High Magnetic Fields in Semiconductor Physics II

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 87))

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Abstract

The fractional quantum Hall states with fractions between 2 and 1 have been studied in the presence of an added parallel magnetic field. The fractional states in this range are observed to behave differently than those associated with fractions less than 1. Whereas there is a definite symmetry about 1/2 for the fractions less than 1, there is no correspondingly simple symmetry about 3/2 for the fractions between 2 and 1. The implications of these results for the hierarchical model and for calculations involving an exact numerical diagonalization for a small number of electrons are discussed.

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Reference

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© 1989 Springer-Verlag Berlin, Heidelberg

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Furneaux, J.E., Syphers, D.A., Swanson, A.G. (1989). The Fractional Quantum Hall Effect with an Added Parallel Magnetic Field. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics II. Springer Series in Solid-State Sciences, vol 87. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83810-1_22

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  • DOI: https://doi.org/10.1007/978-3-642-83810-1_22

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-83812-5

  • Online ISBN: 978-3-642-83810-1

  • eBook Packages: Springer Book Archive

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