Abstract
We present the results of room temperature IR reflection measurements near the Restrahlen region for epitaxial 6H SiC single crystal films deposited on boule grown 6H SiC substrates. The data were collected at near normal incidence (5°) using a Nicolet 740 FTIR spectrometer Fabry-Perot fringes presumably caused by the film-substrate interface are seen in many samples. The nature of this interference is difficult to understand since the index of refraction of the films and the substrate should be comparable. We have attempted to model this effect by inserting a thin layer of different materials between the film and the substrate. We conclude that a metallic-like layer of about 250Å between the film and the substrate will reproduce our data. However, at the present time we have no direct experimental evidence for the existence of such a layer.
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© 1992 Springer-Verlag Berlin Heidelberg
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MacMillan, M.F., Choyke, W.J., Devaty, R.P. (1992). Interference Fringes in the Infrared Reflectance of 6H-SiC Films on 6H-SiC Substrates. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_32
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DOI: https://doi.org/10.1007/978-3-642-84804-9_32
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