Abstract
Secondary ion mass spectrometry is currently widely used to study the in-depth distribution of alloying additions in thin films and, in particular, for the in-depth profiling of implanted atoms in semiconducting materials.
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References
W.K. Hofker, H.W. Werner, D.P. Oosthoek and N.L. Koeman, Appl. Phys. 4, 125 (1974)
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© 1982 Springer-Verlag Berlin Heidelberg
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Cherepin, V.T., Kosyachkov, A.K., Krasyuk, A.D., Vasiliev, M.A. (1982). Structural Effects in SIMS at the Depth Profiling of Boron Implanted Silicon. In: Benninghoven, A., Giber, J., László, J., Riedel, M., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS III. Springer Series in Chemical Physics, vol 19. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-88152-7_35
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DOI: https://doi.org/10.1007/978-3-642-88152-7_35
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