Abstract
Thin-film ac electroluminescent (EL) devices, consisting of a ZnS:Mn active layer sandwiched by a pair of insulating layers, have trap levels in the active layer as well as in the active layer-insulating layer interfaces [1]. Carriers trapped in these levels generate polarized charges and the memory function of a ZnS:Mn EL display is considered to be caused by these polarized charges [2]. Therefore, identification of these trap levels is necessary in order to clarify the operation mechanism of the EL display.
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References
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© 1989 Springer-Verlag Berlin, Heidelberg
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Uchiike, H., Noborio, M., Tatsumi, T., Hirao, S., Fukushima, Y. (1989). Measurement of Trap Levels in Electroluminescent Devices by Photon-Released Residual Charges. In: Shionoya, S., Kobayashi, H. (eds) Electroluminescence. Springer Proceedings in Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93430-8_14
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DOI: https://doi.org/10.1007/978-3-642-93430-8_14
Publisher Name: Springer, Berlin, Heidelberg
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