Abstract
Hg1-xCdxTe-CdTe superlattices of both Type I and Type III have been grown for the first time using the molecular beam epitaxy technique. The superlattices were grown at 190°C. They have been characterized by electron and X-ray diffraction, infrared transmission and magneto-transport measurements. The presence of satellite peaks in the X-ray spectra shows the superlattices to be of high quality. Infrared transmission spectra show that HgCdTe-CdTe superlattices have narrower bandgaps than equivalent HgCdTe alloys. These superlattices are p-type. Shubnikov-de Haas oscillations are observed in the high field magneto-transport measurements. The temperature dependence of such oscillations indicate the heavy holes are the dominating carriers at low temperatures. The Hall characterizations over a large range of alloy concentration in HgCdTe-CdTe superlattices seem to indicate that the high hole mobilities observed in p-type HgTe-CdTe superlattices are due to some type of rela¬tionship between the heavy hole gas and the interface state existing in Type III superlattice. Quantized Hall Effect is observed in these p-type superlattices.
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Faurie, J.P., Woo, K.C., Rafol, S. (1986). Recent Developments in MBE Growth and Properties of Hg1-xCdxTe/CdTe Superlattices. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems: Physics and New Devices. Springer Series in Solid-State Sciences, vol 67. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02470-6_3
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DOI: https://doi.org/10.1007/978-3-662-02470-6_3
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