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In Situ Study of MBE Growth Mechanisms Using RHEED Techniques — Some Consequences of Multiple Scattering

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Two-Dimensional Systems: Physics and New Devices

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 67))

Abstract

Very few methods are available for direct in-situ investigation of crystal growth mechanisms at the atomic level, but the forward scattering geometry of reflection high energy electron diffraction (RHEED) is particularly well suited to studies of molecular beam epitaxy (MBE) growth dynamics. After describing the basic concepts of the RHEED intensity oscillation technique, the influence of multiple scattering effects on the form of the oscillations is demonstrated. It is then shown how the relative contributions of the various diffraction processes involved can be used to derive models of growth dynamics, treating GaAs (001) films as an example.

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© 1986 Springer-Verlag Berlin Heidelberg

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Joyce, B.A., Dobson, P.J., Neave, J.H., Zhang, J. (1986). In Situ Study of MBE Growth Mechanisms Using RHEED Techniques — Some Consequences of Multiple Scattering. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems: Physics and New Devices. Springer Series in Solid-State Sciences, vol 67. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02470-6_5

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  • DOI: https://doi.org/10.1007/978-3-662-02470-6_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02472-0

  • Online ISBN: 978-3-662-02470-6

  • eBook Packages: Springer Book Archive

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