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Heuristic Approach to Band-Edge Discontinuities in Heterostructures

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Two-Dimensional Systems: Physics and New Devices

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 67))

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Abstract

After a brief presentation of the various experimental techniques of band-offset determination in heterojunctions, we present our recent heuristic procedure for band-offset prediction. According to it, the valence-band-edge discontinuity in heterojunctions is given by the difference in the energy level positions of a transition metal deep impurity in the two com-pounds forming the heterojunction.

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Author information

Authors and Affiliations

  1. Institut fur Experimentalphysik, Johannes Kepler Universität Linz, A-4040, Linz, Austria

    H. Heinrich

  2. Institute of Physics, Polish Academy of Sciences, Al. Lotnikôw 32/46, PL-02-668, Warsaw, Poland

    J. M. Langer

Authors
  1. H. Heinrich
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  2. J. M. Langer
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Editor information

Editors and Affiliations

  1. Institut für Physik, Montanuniversität Leoben, Franz-Josef-Straße 18, A-8700, Leoben, Austria

    Günther Bauer

  2. Institut für Festkörperphysik, Universität Wien, A-1090, Wien, Austria

    Friedemar Kuchar

  3. Institut für Experimentalphysik, Universität Linz, A-4040, Linz, Austria

    Helmut Heinrich

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© 1986 Springer-Verlag Berlin Heidelberg

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Heinrich, H., Langer, J.M. (1986). Heuristic Approach to Band-Edge Discontinuities in Heterostructures. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems: Physics and New Devices. Springer Series in Solid-State Sciences, vol 67. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02470-6_9

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  • DOI: https://doi.org/10.1007/978-3-662-02470-6_9

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02472-0

  • Online ISBN: 978-3-662-02470-6

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