Abstract
The oxidation of silicon has been thoroughly investigated since silicon dioxide plays a most important role in silicon devices. Besides the extremely high stability, low diffusion coefficients for specific dopants in SiO2, a high dielectric strength in the bulk of SiO2 films, and a low density of interface states at SiO2/ Si interfaces are essential in devices such as, for example, metal-oxide-silicon field-effect transistors. Unfortunately, native oxides of III–V compound semiconductors possess none of these favorable properties.
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Precursor-mediated adsorption of oxygen on Si((111))-7 × 7 surfaces was also reported by Morgan et al. [1989].
This decomposition procedure of Si(2p) core-level lines was questioned [Miyamoto and Oshiyama 1991] since silicon atoms on oxidized silicon surfaces experience an anisotropic Coulomb field. By using the local-density approximation, the chemically shifted Si(2p) lines were found to consist of three rather than two components as assumed in the decomposition procedure outlined in Fig. 17.9. This computational result indicates that the 2p 1/2 and the 2p 3/2 states hybridize. The energy separation between two of the three components is close to the spin-orbit splitting of 0.61 eV as observed in the bulk and on clean surfaces while the third component is shifted by half of this value towards lower binding energies.
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© 1995 Springer-Verlag Berlin Heidelberg
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Mönch, W. (1995). Oxidation of Silicon and III–V Compound Semiconductors. In: Semiconductor Surfaces and Interfaces. Springer Series in Surface Sciences, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03134-6_17
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DOI: https://doi.org/10.1007/978-3-662-03134-6_17
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-58625-8
Online ISBN: 978-3-662-03134-6
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