Abstract
To remove metallic contaminants from the surface of silicon wafers, a combination of acidic mixtures, such as HF solution, H2SO4-H2O2 mixture, and HC1-H2O2 mixture (SC-2), and alkali mixtures, such as NH4OH-H2O2 (SC-1), is being used at present.
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References
M. L. Kniffin, T. E. Beerling, and C. R. Helms: J. Electrochem. Soc. 139, 1195 (1992).
O. Antlla, M. Tilli, M. Schaekers, and C. Claeys: J. Electrochem. Soc. 139, 1180 (1992).
T. Ohmi, T. Imaoka, I. Sugiyama, and T. Kezuka: J. Electrochem. Soc. 139, 3317 (1992).
J. Ryuta, T. Yoshimi, H. Kondo, H. Okuda, and Y. Shimanuki: Jpn. J. Appl. Phys. 31, 2338 (1992).
B. Nguyen, Y. Limb, P. Yobin, G. Huffman, C. Kouba, S. Gonzales, and L. La: Digest of Symposium on VLSI Technology, p. 109 (1993).
E. Hsu, H. Park, R. Craigin, S. Tomooka, J. Ramberg, and R. Lowry: J. Elec- trochem. Soc. 139, 3659 (1992).
J. E. Turner, K. Miyazaki, Y. Fukazawa, and H. Muraoka: Extended Abstracts of 187th ECS Meeting, 518 (1995).
W. Kern and D. Poutinen: RCA Review, 137 (1970).
Y. Fukazawa, K. Miyazaki, K. Sanpei, T. Nakajima, and K. Takase: ISSM ‘84 Extended Abstract, 198 (1994).
M. Morita, T. Ohmi, E. Hasagawa, M. Kawakami, and K. Suma: Appl. Phys. Lett. 55, 562 (1989).
T. Shimono and M. Tsuji: Proceedings of 1st Workshop on Ultra Clean Technology, 52, Ultra Clean Soc., Tokyo (1992).
T. Ohmi, T. Imaoka, I. Sugiyama, and T. Kezuka: J. Electrochem. Soc. 139, 3336 (1992).
D. Graf, S. Mayer, M. Brohl, and A. Schnegg: Abstracts of the 1st International Symposium on Ultra Clean Processing of Silicon Surfaces (1992).
H. Aoki, M. Nakamori, N. Aoto, and E. Ikawa: VLSI Symposium, 107 (1993).
Y. Fukazawa, K. Sanpei, T. Nakajima, T. Takase, K. Miyazaki: Proc. 2nd Int. Symposium on Ultraclean Processing of Silicon Surfaces, 267 (1994).
M. Miyamoto, N. Kita, S. Ishida, and T. Tatsuno: Ext. Abst. of 184th ECS Meeting, 561 (1993).
T. Isagawa et al.: Proceedings of the 17th Symposium on Ultra Clean Technology, 125 (1993).
S. Watanabe, N. Nakayama, and T. Ito: Appl. Phys. Lett. 59, 1458 (1991).
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© 1998 Springer-Verlag Berlin Heidelberg
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Fukazawa, Y. (1998). Wet Cleaning (Part 2): Removal of Metallic Contaminants. In: Hattori, T. (eds) Ultraclean Surface Processing of Silicon Wafers. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03535-1_34
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DOI: https://doi.org/10.1007/978-3-662-03535-1_34
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