Abstract
The energies of the optical transitions in the bulk of semiconductors are sensitive to variations in temperature and to the application of external pressure. The effects of the temperature as well as the pressure on the barrier heights of Schottky contacts are well explained by the MIGS model.
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© 2004 Springer-Verlag Berlin Heidelberg
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Mönch, W. (2004). Temperature and Pressure Effects. In: Electronic Properties of Semiconductor Interfaces. Springer Series in Surface Sciences, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-06945-5_8
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DOI: https://doi.org/10.1007/978-3-662-06945-5_8
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-05778-6
Online ISBN: 978-3-662-06945-5
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