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Carbon Nanotube Applications in Microelectronics

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Abstract

The extraordinary characteristics of carbon nanotubes make them a promising candidate for applications in microelectronics. Catalyst-mediated CVD growth is very well suited for selective, in situ growth of nanotubes compatible with the requirements of microelectronics technology. This deposition method can be exploited for carbon nanotube vias. Semiconducting singlewalled tubes can be successfully operated as carbon nanotube field effect transistors (CNTFETs). A simulation of an ideal CNTFET is presented and compared with the requirements of the ITRS Roadmap. Finally, we compare an upgraded CNTFET with the most advanced silicon MOSFETs.

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Authors
  1. W. Hoenlein
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  2. F. Kreupl
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  3. G. S. Duesberg
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  4. A. P. Graham
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  5. M. Liebau
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  6. R. Seidel
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  7. E. Unger
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Editor information

Editors and Affiliations

  1. General Secretary European Materials Research Society, 23 rue du Loess, 67037, Strasbourg Cedex 2, France

    P. Siffert

  2. Siemens Corporate Research Laboratories, München, Germany

    E. F. Krimmel

  3. J.W. Goethe University, Frankfurt/M, Germany

    E. F. Krimmel

  4. European Materials Research Society, Strasbourg, France

    E. F. Krimmel

  5. Mendelssohnstr. 7, 82049, Pullach/Isartal, Germany

    E. F. Krimmel

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© 2004 Springer-Verlag Berlin Heidelberg

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Hoenlein, W. et al. (2004). Carbon Nanotube Applications in Microelectronics. In: Siffert, P., Krimmel, E.F. (eds) Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09897-4_23

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  • DOI: https://doi.org/10.1007/978-3-662-09897-4_23

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-07356-4

  • Online ISBN: 978-3-662-09897-4

  • eBook Packages: Springer Book Archive

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