Abstract
The source-side injection current in a split-gate structure has been modeled starting from the electron energy distribution along the Si-SiO2 interface provided by the deterministic solution of the Boltzmann Transport Equation in the semiconductor domain. When accounting for parallel momentum conservation, the order of magnitude of the current and its dependence on applied voltages is successfully reproduced.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
D. Ventura, A. Gnudi, G. Baccarani, “An efficient method for evaluating the energy distribution of electrons in semiconductors based on spherical harmonics expansion”, Ieice Transactions on Electronics, vol. E75-C, pp. 194–199, 1992.
S. Reggiani, M. C. Vecchi, and M. Rudan, “Investigation on Electron and Hole Transport Properties Using the Full-Band Spherical-Harmonics Expansion Method”, IEEE Transactions on Electron Devices, vol. 45, pp.2010–2017, 1998.
J. Van Houdt, L. Haspeslagh, D. Wellekens, L. Deferm, G. Groeseneken, and H. E. Maes, “HIMOS-A High Efficiency Flash E2PROM Cell for Embedded Memory Applications”, IEEE Transactions on Electron Devices, vol. 40, pp.2255–2263, 1993.
A. Greiner, M. C. Vecchi and M. Rudan, “Modelling surface-scattering effects in the solution of the Boltzmann transport equation based on the spherical-harmonics expansion”, Semiconductor Science and Technology, vol. 13, pp. 1080–1089, 1998.
M. V. Fischetti, S. E. Laux, and E. Crabbé, “Understanding hot-electron transport in silicon devices: Is there a shortcut?”, Journal of Applied Physics, vol. 78, pp. 1058–1087, 1995.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2004 Springer-Verlag Wien
About this paper
Cite this paper
Lorenzini, M., Wellekens, D., Haspeslagh, L., Van Houdt, J. (2004). Source-Side Injection Modeling by Means of the Spherical-Harmonics Expansion of the BTE . In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_22
Download citation
DOI: https://doi.org/10.1007/978-3-7091-0624-2_22
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
eBook Packages: Springer Book Archive