Abstract
The fundamentally sound non-Equilibrium Green’s function (NEGF) approach provides the theoretical basis for NEMO 1-D as the first nanoelectronic TCAD tool. Effects of quantum charging, bandstructure and incoherent scattering from alloy disorder, interface roughness, acoustic phonons, and polar optical phonons are modeled. Engineers and experimentalists who desire a black-box design tool as well as theorists who are interested in a detailed investigation of the physics have found NEMO useful. Access to this comprehensive theoretical framework is accommodated by a graphical user interface (GUI) which configures the usage of a collection of models that trade off physical content with speed and memory requirements. This article describes the NEMO origin, provides modern references to NEGF, accumulates the diverse references to the NEMO results, and provides a perspective on NEGF in future TCAD tools.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
T. P. E. Broekaert et al., 33, 1342 (1998).
J. P. A. van der Wagt, A. C. Seabaugh, and E. Beam III, 19, 7 (1998).
R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, J. Appl. Phys. 81, 7845 (1997).
S. Datta, in IEDM (IEEE, NY, 2002).
S. Datta, Nanotechnology 15, S433 (2004).
R. Lake et al. http://www.ee.ucr.edu/rlake/dresden02_final_unix.pdf.
http://nanohub.org — A community resource for On-line simulation and more.
Supriyo Datta, on-line course, “Quantum Phenomena: From Atoms to Transistors”, http://www.nanohub.org/quantum_phenomena/quantum_phenomena.
G. Klimeck et al., Appl. Phys. Lett. 67, 2539 (1995).
G. Klimeck et al. in the 1995 Ann. Dev. Res. Conf. Digest, (IEEE, NJ, 1995), p. 52.
R. C. Bowen et al., J. Appl. Phys 81, 3207 (1997).
R. Lake et al. in the 1996 Ann. Dev. Res. Conf. Digest, (IEEE, NJ, 1996), p. 174.
G. Klimeck et al. in the 1997 Ann. Dev. Res. Conf. Digest, (IEEE, NJ, 1997), p. 92.
C. Bowen et al. in IEDM 1997 (IEEE, New York, 1997), pp. 869–872.
T. B. Boykin, Phys. Rev. B 54, 8107 (1996).
T. Boykin et al., submitted to Phys. Rev. B (1997).
R. Lake et al., Superlatt. and Microstruct. 20, 279 (1996).
G. Klimeck et al., in Quantum Devices and Circuits, edited by K. Ismail, S. Bandyopadhyay, and J. P. Leburton (Imperial College Press, London, 1997), pp. 154–159.
G. Klimeck et al., Phys. Stat. Sol. (b) 204, 408 (1997).
R. C. Bowen, W. R. Frensley, G. Klimeck, and R. Lake, PRB 52, 2754 (1995).
G. Klimeck et al., VLSI Design 6, 107 (1998).
G. Klimeck et al., VLSI Design 8, 79 (1998).
G. Klimeck, J. of Computational Electr. 1, 75 (2002).
G. Klimeck, R. C. Bowen, and T. B. Boykin, Phys. Rev. B 63, 195310 (2001).
G. Klimeck, Physica Status Solidi (b) 226, 9 (2001).
G. Klimeck, J. of Computational Electr. 2, 177 (2003).
J. Green et al., in CLEO/Europe 2003 (CLEO, Munich, 2003).
G. Klimeck, C. H. Salazar-Lazaro, A. Stoica, and T. Cwik, in Proc. Mat. Res. Soc. (Mat. Res. Soc, Boston, 1998), Vol. 559, p. 149.
G. Klimeck et al., Superl. and Microstr. 27, 77 (2000).
T. B. Boykin, G. Klimeck, and F. Oyafuso, Phys. Rev. B. 69, 115201 (2004).
G. Klimeck et al., Comp. Modeling in Eng. and Sci. (CMES) 3, 601 (2002).
H. Kosina, G. Klimeck, M. Nedjalkov, and S. Selberherr, in SISPAD 2003 (IEEE, Boston, 2003), pp. 171–174.
C. L. Gardner, G. Klimeck, and C. Ringhofer, subm. to J. of Comp. Electr. (2004).
http://www.fz-juelich.de/isg/mbe/sofrware.html./isg/mbe/sofrware.html.
C. Rivas et al., Appl. Phys. Lett. 78, 814 (2001).
C. Rivas et al., J. of Appl. Phys 94, 5005 (2003).
R. T. T. M. Matsuto Ogawa, Takashi Sugano, Physica B 272, 167 (1999).
C. Rivas and R. Lake, phys. stat. sol (a) 195, 3 (2003).
C. Rivas and R. Lake, (Nanotech, San Francisco, 2003), Vol. 559, p. 149.
Z. Ren et al., IEEE T Electr. Dev. 50, 12 (2003).
A. Svizhenko and M. Anantram, IEEE T. Electr. Dev 50, 8 (2003).
M. Ogawa, H. Tsuchiya, and T. Miyoshi, IEEE SISPAD 261 (2002).
P. Damle, A. Ghosh, and S. Datta, Phys. Rev.B, Rap. Comm. 201403 (2001).
M. Brandbyge et al., Phys. Rev. B. 65, 165401 (2002).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2004 Springer-Verlag Wien
About this paper
Cite this paper
Klimeck, G. (2004). NEMO 1-D: the first NEGF-based TCAD tool. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_2
Download citation
DOI: https://doi.org/10.1007/978-3-7091-0624-2_2
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
eBook Packages: Springer Book Archive