Abstract
This chapter explains the reason and the mechanism of excellent characteristics in the QW-LDs, such as a low threshold current, high differential quantum efficiency, high-speed modulation, low chirping, and narrow spectral linewidth. To achieve these excellent characteristics, QW-LDs have to overcome small optical confinement factors for the active layers, which are caused by thin active layers. To obtain optical confinement factors for active layers as large as possible, several QW structures have been proposed, and these proposed QW structures are reviewed. In addition, strained QW-LDs are described using Lattinger-Kohn Hamiltonian and strain-dependent spin–orbit interaction. As a base to understand the strain, a relation between the strain and stress in the zinc-blende structures is described.
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Numai, T. (2015). Quantum Well LDs. In: Fundamentals of Semiconductor Lasers. Springer Series in Optical Sciences, vol 93. Springer, Tokyo. https://doi.org/10.1007/978-4-431-55148-5_7
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DOI: https://doi.org/10.1007/978-4-431-55148-5_7
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