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Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs

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Fundamentals of Bias Temperature Instability in MOS Transistors

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 52))

Abstract

In this chapter, the basic experimental signatures of NBTI and PBTI degradation respectively in p- and n-channel MOSFETs are discussed. Historical results from published reports are briefly reviewed for SiON and HKMG MOSFETs. Results obtained using ultra-fast characterization methods are shown for DC and AC BTI degradation in state-of-the-art SiON and HKMG MOSFETs. The impact of gate insulator processes on magnitude of NBTI degradation and its time, bias and temperature dependence is discussed for SiON p-MOSFETs. Time evolution of NBTI and PBTI degradation during and after DC stress and during AC stress is shown for HKMG MOSFETs, and the impact of stress bias and temperature, as well as that of AC pulse duty cycle and frequency are discussed. Impact of basic HKMG process variations, such as Nitrogen incorporation and interlayer thickness scaling are also discussed. Similarities and differences between NBTI and PBTI results are highlighted.

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Acknowledgments

The authors would like to acknowledge Vrajesh Maheta for NBTI measurements in SiON devices, Applied Materials for providing SiON and HKMG devices and Ankush Chaudhary for editorial support.

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  1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, 400076, India

    Souvik Mahapatra, Nilesh Goel & Subhadeep Mukhopadhyay

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Mahapatra, S., Goel, N., Mukhopadhyay, S. (2016). Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs. In: Mahapatra, S. (eds) Fundamentals of Bias Temperature Instability in MOS Transistors. Springer Series in Advanced Microelectronics, vol 52. Springer, New Delhi. https://doi.org/10.1007/978-81-322-2508-9_1

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