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Mextram

  • Chapter
Compact Modeling

Abstract

We present the Mextram model, an industrial world standard compact model for bipolar transistors, showing the identity, philosophy and capabilities of the model. Mextram has been developed to capture all terminal characteristics of bipolar transistors that are relevant to industrial electronic circuit design of any Si or SiGe bipolar transistor, under all relevant practical circumstances. History, basic structure and features of the model are discussed, including simulation of heating effects, noise, geometrical scaling and statistical analysis. The relevance of the refined topology of its equivalent circuit, to simulation of advanced ac-characteristics of modern high-speed Si and SiGe transistors is extensively demonstrated.

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Notes

  1. 1.

    TechAmerica, formed by the merger of AeA (formerly the American Electronics Association), the Cyber Security Industry Alliance (CSIA), the Information Technology Association of America (ITAA) and the Government Electronics & Information Technology Association (GEIA), offers leading federal market research and standards development programs to the high-tech industry at large: www.geia.org/index.asp?bid=597.

  2. 2.

    For the most recent model descriptions, source code, and documentation, see the web-site http://mextram.ewi.tudelft.nl.

  3. 3.

    This is also apparent from the extensive literature that is devoted to the physics of the epilayer: see e.g. references [1, 2, 4, 7, 9, 13, 14, 20, 23, 30, 36, 46, 51, 53].

  4. 4.

    Again we focus on npn transistors; for pnp transistors the Gummel number would be formulated in terms of electron concentrations.

  5. 5.

    In the notation used here, the functions K j are associated with nodes: K 1 is associated with node C 1 of the equivalent circuit, Fig. 7.1. In much of the Mextram literature and documentation, the value of the function K 1 is notated as K W (and K 2 is denoted as K 0).

  6. 6.

    In the notation of expression (7.21), the voltage \(V_{B_{2}C_{2^{*}}}\) appears in the expression for \(K_{2^{*}}\). In much of the Mextram literature and documentation, this voltage \(V_{B_{2}C_{2^{*}}}\) is notated as \(V^{*}_{B_{2}C_{2}}\).

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Acknowledgments

The authors are indebted to the IEEE Intellectual Property Rights Office for granted permission to re-use figures of IEEE copyrighted publications and to Daniel P. Vidal (Delft University) for reading the penultimate version of this manuscript.

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Authors and Affiliations

  1. Faculty of Applied Mathematics, Electrical Engineering & Computer Science, Delft University of Technology, Mekelweg 4, 2628 CD, Delft, The Netherlands

    R. van der Toorn & H. C. de Graaff

  2. NXP Semiconductors, Eindhoven, The Netherlands

    J. C. J. Paasschens, W. J. Kloosterman & H. C. de Graaff

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  1. R. van der Toorn
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  2. J. C. J. Paasschens
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  3. W. J. Kloosterman
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  4. H. C. de Graaff
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Correspondence to R. van der Toorn .

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  1. , Sch Elect Comptr & Energy Engr, Arizona State University, University Drive and Mill Avenue, Tempe, 85287-9309, Arizona, USA

    Gennady Gildenblat

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van der Toorn, R., Paasschens, J.C.J., Kloosterman, W.J., de Graaff, H.C. (2010). Mextram. In: Gildenblat, G. (eds) Compact Modeling. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-8614-3_7

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  • DOI: https://doi.org/10.1007/978-90-481-8614-3_7

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