Abstract
ChapterĀ 4 extends a TCAD device simulator to allow electrical simulations of scaled Ge MOSFETs.
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References
F.Ā Bellenger, M.Ā Houssa, A.Ā Delabie, V.Ā Afanasiev, T.Ā Conard, M.Ā Caymax, M.Ā Meuris, K. DeĀ Meyer, M.M.Ā Heyns, Passivation of Ge(100)/GeO2/high-Īŗ gate stacks using thermal oxide treatments. J.Ā Electrochem. Soc. 155(2), G33āG38 (2008)
D.M.Ā Caughey, R.E.Ā Thomas, Carrier mobilities in silicon empirically related to doping and field. Proc. IEEE 55(12), 2192ā2193 (1967)
R.Ā Chau, S.Ā Datta, M.Ā Doczy, B.Ā Doyle, B.Ā Jin, J.Ā Kavalieros, A.Ā Majumdar, M.Ā Metz, M.Ā Radosavljevic, Benchmarking nanotechnology for high-performance and low-power logic transistor applications. IEEE Electron Device Lett. 4(2), 153ā158 (2005)
C.-O.Ā Chui, H.Ā Kim, D.Ā Chi, B.B.Ā Triplett, P.C.Ā McIntyre, K.C.Ā Saraswat, A sub-400Ā degĀ°C germanium MOSFET technology with high-Īŗ dielectric and metal gate, in International Electron Devices Meeting (2002), pp.Ā 437ā440
B. DeĀ Jaeger, R.Ā Bonzom, F.Ā Leys, J.Ā Steenbergen, G.Ā Winderickx, E. VanĀ Moorhem, G.Ā Raskin, F.Ā Letertre, T.Ā Billon, M.Ā Meuris, M.Ā Heyns, Optimisation of a thin epitaxial Si layer as a Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-insulator substrates. Microelectron. Eng. 80, 26ā29 (2005)
G.Ā Du, X.Y.Ā Liu, Z.-L.Ā Xia, Y.K.Ā Wang, D.Q.Ā Hou, J.F.Ā Kang, R.Q.Ā Han, Evaluations of scaling properties for Ge on insulator MOSFETs in nano-scale. Jpn. J. Appl. Phys. 44(4B), 2195ā2197 (2005)
G.Ā Eneman, M.Ā Wiot, A.Ā Brugere, O.S.I.Ā Casain, S.Ā Sonde, D.P.Ā Brunco, B. DeĀ Jaeger, A.Ā Satta, G.Ā Hellings, K. DeĀ Meyer, C.Ā Claeys, M.Ā Meuris, M.M.Ā Heyns, E.Ā Simoen, Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions. IEEE Trans. Electron Devices 55(9), 2287ā2296 (2008)
G.Ā Eneman, B. DeĀ Jaeger, E.Ā Simoen, D.P.Ā Brunco, G.Ā Hellings, J.Ā Mitard, K. DeĀ Meyer, M.Ā Meuris, M.M.Ā Heyns, Quantification of drain extension leakage in a scaled bulk germanium pMOS technology. IEEE Trans. Electron Devices 56(12), 3115ā3122 (2009)
V.I.Ā Fistul, M.I.Ā Iglitsyn, E.M.Ā Omelyanovskii, Mobility of electrons in germanium strongly doped with arsenic. Sov. Phys., Solid State 4(4), 784ā785 (1962)
J.G.Ā Fossum, D.S.Ā Lee, A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon. Solid-State Electron. 25, 741ā747 (1982)
E.Ā Gaubas, M.Ā Bauza, A.Ā Uleckas, J.Ā Vanhellemont, Carrier lifetime studies in Ge using microwave and infrared light techniques. Mater. Sci. Semicond. Process. 9(4ā5), 781ā787 (2006). Also in Proceedings of Symposium T E-MRS 2006 Spring Meeting on Germanium Based Semiconductors from Materials to Devices
O.A.Ā Golikova, B.Ya.Ā Moizhes, L.S.Ā Stilābans, Hole mobility of germanium as a function of concentration and temperature. Sov. Phys., Solid State 3(10), 2259ā2265 (1962)
G.Ā Hellings, G.Ā Eneman, R.Ā Krom, B. DeĀ Jaeger, J.Ā Mitard, A. DeĀ Keersgieter, T.Ā Hoffmann, M.Ā Meuris, K. DeĀ Meyer, Electrical TCAD simulations of a germanium pMOSFET technology. IEEE Trans. Electron Devices 57(10), 2539ā2546 (2010)
G.A.M.Ā Hurkx, D.B.M.Ā Klaassen, M.P.G.Ā Knuvers, A new recombination model for device simulation including tunneling. IEEE Trans. Electron Devices 39(2), 331ā338 (1992)
R.D.Ā Larrabee, Drift velocity saturation in p-type germanium. J.Ā Appl. Phys. 30(6), 857ā859 (1959)
C.Ā Lombardi, S.Ā Manzini, A.Ā Saporito, M.Ā Vanzi, A physically based mobility model for numerical simulation of nonplanar devices. IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. 7(11), 1164ā1171 (1988)
K.Ā Martens, J.Ā Mitard, B. DeĀ Jaeger, M.Ā Meuris, H.Ā Maes, G.Ā Groeseneken, F.Ā Minucci, F.Ā Crupi, Impact of Si-thickness on interface and device properties for Si-passivated Ge pMOSFETs, in Solid-State Device Research Conference (2008), pp.Ā 138ā141
K.Ā Martens, C.Ā On Chui, G.Ā Brammertz, B. DeĀ Jaeger, D.Ā Kuzum, M.Ā Meuris, M.Ā Heyns, T.Ā Krishnamohan, K.Ā Saraswat, H.E.Ā Maes, G.Ā Groeseneken, On the correct extraction of interface trap density of mos devices with high-mobility semiconductor substrates. IEEE Trans. Electron Devices 55(2), 547ā556 (2008)
G.Ā Masetti, M.Ā Severi, S.Ā Solmi, Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon. IEEE Trans. Electron Devices 30(7), 764ā769 (1983)
J.Ā Mitard, K.Ā Martens, B. DeĀ Jaeger, J.Ā Franco, C.Ā Shea, C.Ā Plourde, F.Ā Leys, R.Ā Loo, G.Ā Hellings, G.Ā Eneman, W.Ā Wang, V.Ā Lin, B.Ā Kaczer, K. DeĀ Meyer, T.Ā Hoffmann, S. DeĀ Gendt, M.Ā Caymax, M.Ā Meuris, M.Ā Heyns, Impact of Epi-Si growth temperature on Ge-pFET performance, in 39th European Solid-State Device Research Conference (ESSDERC) (2009), pp.Ā 411ā414
J.Ā Mitard, C.Ā Shea, B. DeĀ Jaeger, A.Ā Pristera, G.Ā Wang, M.Ā Houssa, G.Ā Eneman, G.Ā Hellings, W.E.Ā Wang, J.C.Ā Lin, F.E.Ā Leys, R.Ā Loo, G.Ā Winderickx, E.Ā Vrancken, A.Ā Stesmans, K. DeĀ Meyer, M.Ā Caymax, L.Ā Pantisano, M.Ā Meuris, M.Ā Heyns, Impact of EOT scaling down to 0.85nm on 70nm GE-pFETs technology with STI, in Symposium on VLSI Technology (2009), pp.Ā 82ā83
E.J.Ā Ryder, Mobility of holes and electrons in high electric fields. Phys. Rev. 90(5), 766ā769 (1953)
A.Ā Schenk, Rigorous theory and simplified model of the band-to-band tunneling in silicon. Solid-State Electron. 36(1), 19ā34 (1993)
Sentaurus sdevice, ver. D-2010.03. Available from Synopsys inc. (2010)
Sentaurus sprocess, ver. D-2010.03. Available from Synopsys inc. (2010)
S.M.Ā Sze, Physics of Semiconductor Devices (Wiley, Hoboken, 1981)
S.Ā Takagi, A.Ā Toriumi, M.Ā Iwase, H.Ā Tango, On the universality of inversion layer mobility in Si MOSFETās: Part I. Effects of substrate impurity concentration. IEEE Trans. Electron Devices 41(12), 2357ā2362 (1994)
N.Ā Taoka, K.Ā Ikeda, Y.Ā Yamashita, N.Ā Sugiyama, S.Ā Takagi, Effects of ambient conditions in thermal treatment for Ge(0 0 1) surfaces on GeāMIS interface properties. Semicond. Sci. Technol. 22(1), S114 (2007)
N.Ā Taoka, M.Ā Harada, Y.Ā Yamashita, T.Ā Yamamoto, N.Ā Sugiyama, S.-I.Ā Takagi, Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility. Appl. Phys. Lett. 92(11), 113511 (2008)
L.Ā Trojman, L.Ā Pantisano, M.Ā Dehan, I.Ā Ferain, S.Ā Severi, H.E.Ā Maes, G.Ā Groeseneken, Velocity and mobility investigation in 1-nm-EOT HfSiON on Si (110) and (100)āDoes the dielectric quality matter? IEEE Trans. Electron Devices 56(12), 3009ā3017 (2009)
Y.Ā Tsividis, Operation and Modeling of the MOS Transistor (Oxford University Press, Oxford, 1999)
M.S.Ā Tyagi, R. VanĀ Overstraeten, Minority carrier recombination in heavily-doped silicon. Solid-State Electron. 26, 577ā597 (1983)
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Appendix
Appendix
4.1.1 A.1 TCAD Model Parameters
This appendix contains the model parameters used in this work. Each time, both the name of physical phenomenon and the name of the parameter set is given (e.g. SRH-recombination is modeled using the Scharfetter dataset in Sentaurus Device) together with the default silicon values. If different values apply for electrons and holes, both values are given in this order, separated by a comma. Note that the definition of these parameters below applies solely to their specific implementation in Sentaurus Device. The literature references on which these models are based may use slightly different definitions. For this reason, the parameters below are not included in the general list of symbols of this book.
4.1.2 A.2 Recombination
SRH-recombination (Scharfetter)
Parameter | Units | Si (e, h) | Ge (e, h) |
---|---|---|---|
Ļ min | s | 0, 0 | 0, 0 |
Ļ max | s | 1Ć10ā5, 3Ć10ā6 | 4Ć10ā5, 4Ć10ā5 |
N ref | cmā3 | 1016, 1016 | 1014, 1014 |
Ī³ | ā | 1, 1 | 0.85, 0.85 |
T Ī± | ā | ā1.5, ā1.5 | ā1.5, ā1.5 |
T coeff | ā | 2.55, 2.55 | 2.55, 2.55 |
E trap | eV | 0.0, 0.0 | 0.0, 0.0 |
Note (1)āE trap refers to the SRH reference trap energy w.r.t mid-bandgap (e.g. E trap =0.0 corresponds to E V +0.33Ā eV in Germanium) | |||
Note (2)āĻ max was taken from [47] and then decreased slightly to correspond with the leakage measurements on our Ge p+/n diodes | |||
Note (3)āThe temperature dependence for Ge was not investigated. Instead, Si defaults are still used. Further research is required for this dependency |
TAT (HurckxTrapAssistedTunneling)
Parameter | Units | Si (e, h) | Ge (e, h) |
---|---|---|---|
m t | ā | 0.5, 0.5 | 0.12, 0.34 |
BTBT (Band2BandTunneling)
Parameter | Units | Si | Ge |
---|---|---|---|
A | cmāsā1āVā2 | 8.977Ć1020 | 8.977Ć1020 |
B | eVā3/2āVācmā1 | 2.147Ć107 | 1.6Ć107 |
4.1.3 A.3 Mobility
Phonon Scattering (ConstantMobility)
Parameter | Units | Si (e, h) | Ge (e, h) |
---|---|---|---|
Ī¼ max | cm2āVā1āsā1 | 1417, 470.5 | 3900, 1900 |
exponent | ā | 2.5, 2.2 | 2.5, 2.2 |
Impurity Scattering (DopingDependence)
Parameter | Units | Si (e, h) | Ge (e, h) |
---|---|---|---|
Ī¼ min1 | cm2/Vs | 52.2, 44.9 | 60, 60 |
Ī¼ min2 | cm2/Vs | 52.2, 0.0 | 0, 0 |
Ī¼ 1 | cm2/Vs | 43.4, 29 | 20, 40 |
P c | cmā3 | 0, 9.23Ć1016 | 1017, 9.23Ć1016 |
C r | cmā3 | 9.68Ć1016, 2.23Ć1017 | 8Ć1016, 2Ć1017 |
C s | cmā3 | 3.34Ć1020, 6.10Ć1020 | 3.43Ć1020, 1020 |
Ī± | ā | 0.68, 0.719 | 0.55, 0.55 |
Ī² | ā | 2.0, 2.0 | 2.0, 2.0 |
High Lateral Field Mobility (HighFieldDependence)
Parameter | Units | Si (e, h) | Ge (e, h) |
---|---|---|---|
v sat0 | cm/s | 1.07Ć107, 8.37Ć106 | 8Ć106, 6Ć106 |
High Transversal Field Mobility (EnormalDependence (holes only))
Parameter | Units | Si | Ge |
---|---|---|---|
B | cm/s | 9.925Ć106 | 1.993Ć105 |
C | cm5/3āVā2/3āsā1 | 2.947Ć103 | 4.875Ć103 |
N 0 | cmā3 | 1 | 1 |
Ī» | ā | 0.0317 | 0.0317 |
k | ā | 1 | 1 |
Ī“ | cm2/Vs | 2.0546Ć1014 | 1.705Ć1011 |
A | ā | 2 | 1.5 |
Ī± ā„ | cm3 | 0 | 0 |
N 1 | cmā3 | 1 | 1 |
Ī½ | ā | 1 | 1 |
Ī· | V2ācmā1āsā1 | 2.0546Ć1030 | 2.0546Ć1030 |
l crit | cm | 10ā6 | 10ā6 |
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Hellings, G., De Meyer, K. (2013). Electrical TCAD Simulations and Modeling in Germanium. In: High Mobility and Quantum Well Transistors. Springer Series in Advanced Microelectronics, vol 42. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6340-1_4
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