Summary and Limiting Factors of PECCS

Abstract

So far, through the previous 5 chapters, we have introduced the mechanisms and applications of our photo-electric probing methodology, PECCS to quantitatively measure the interfacial trap DOS of organic, oxide, and nanostructure channel FETs. In the case of p- and n-channel organic FETs, the PECCS plot demonstrates the interface trap DOS peaks and HOMO–LUMO peaks as well, while in the polycrystalline ZnO and amorphous InGaZnO TFTs electron trap DOS profiles were shown below their respective bandgaps (~3.2 eV). Nanowire ZnO FET displays quite unstable behavior during the initial gate bias sweeps for PECCS, showing a large amount of fifth shift from green illumination of 2.3 eV on due to high density traps at the single crystalline ZnO NW/oxide dielectric interface.