Abstract
Quantum dot (QD) arrays are considered now to be very promising in semiconductor laser applications. Single quantum dot represents a potential quantum well in which the carrier motion is quantised in all three directions. The zero dimensional electronic system can offer an improvement in threshold current density and its temperature stability owing to a delta-function-like density of states [1]. The novel approach to form a dense QD array in wider band-gap material matrix is a so called self assembled growth. The method is based on a spontaneous transformation of strained epitaxial layer into an array of quantum sized islands due to Stranski-Krastanov growth mode [2]. In the present work we demonstrate MBE growth of (In,Ga)As QD in GaAs matrix leading to an injection lasing at room temperature [3].
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References
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Kirstaedter, N., Ledentsov, N.N., Grundmann, M., Bimberg, D., Ustinov, V.M., Ruvimov, S.S., Maximov, M.V., Kop’ev, P.S., Alferov, Zh.I., Richter, U., Werner, P., Gosele, U., and Heydenreich, J. (1994) Low threshold, large T0 injection laser emission from (InGa)As quantum dots, Electron. Lett 30, 1416–1417.
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© 1996 Kluwer Academic Publishers
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Ustinov, V.M. et al. (1996). MBE Growth of (In,Ga)As Self-Assembled Quantum Dots for Optoeletronic Applications. In: Balkanski, M. (eds) Devices Based on Low-Dimensional Semiconductor Structures. NATO ASI Series, vol 14. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0289-3_5
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DOI: https://doi.org/10.1007/978-94-009-0289-3_5
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-6615-0
Online ISBN: 978-94-009-0289-3
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