Abstract
The low temperature epitaxial crystallization of chemical vapor deposited silicon layers obtained by means of high energy ion irradiation is studied. Both the kinetics of the process and the morphology of the regrown layers are characterized. This novel procedure, in view of the small thermal budgets involved, can result interesting for possible application to the bipolar technology.
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© 1990 ECSC, EEC, EAEC, Brussels and Luxembourg
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Priolo, F., Spinella, C., Rimini, E. (1990). Low Temperature Ion-Assisted Epitaxy of Deposited Silicon Layers. In: ESPRIT ’90. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0705-8_9
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DOI: https://doi.org/10.1007/978-94-009-0705-8_9
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-6803-1
Online ISBN: 978-94-009-0705-8
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