High Resolution Studies of the Internal Oxidation of Hafnium Implanted Magnesium Single Crystals, Using BaF2 Detectors

Cruz, M. M.; Melo, A. A.; Soares, J. C.

doi:10.1007/978-94-009-2800-8_13

M. M. Cruz³,
A. A. Melo³ &
J. C. Soares³

Part of the book series: NATO ASI Series ((NSSE,volume 144))

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Abstract

The time differential perturbed angular correlation technique with BaF₂ detectors has been applied to study the hafnium implanted magnesium system. The time resolution of about 700ps, allowed the measurement of two electric field gradients Vzz⁽¹⁾=2.63(8)×10¹⁸ Vcm^-2 with η=0 and Vzz⁽²⁾=2.92(9)×10¹⁸ Vcm^-2 with η=0.10(3), explained by the internal oxidation of hafnium after the annealing treatment at 540K.

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References

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Authors and Affiliations

Centro de Física Nuclear da Universidade de Lisboa (INIC), 1699, Lisboa, Portugal
M. M. Cruz, A. A. Melo & J. C. Soares

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M. M. Cruz
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A. A. Melo
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J. C. Soares
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Editors and Affiliations

Fakultät für Physik, Universität Konstanz, Konstanz, Germany
E. Recknagel
Centro de Fisica Nuclear, Universidade de Lisboa, Lisboa Codex, Portugal
J. C. Soares

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Cruz, M.M., Melo, A.A., Soares, J.C. (1988). High Resolution Studies of the Internal Oxidation of Hafnium Implanted Magnesium Single Crystals, Using BaF₂ Detectors. In: Recknagel, E., Soares, J.C. (eds) Nuclear Physics Applications on Materials Science. NATO ASI Series, vol 144. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2800-8_13

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DOI: https://doi.org/10.1007/978-94-009-2800-8_13
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-7759-0
Online ISBN: 978-94-009-2800-8
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