Abstract
We report on synchrotron-radiation photoemission measurements of the valence-band discontinuity and of the Fermi-level position for 25 different interfaces involving group-IV, III-V, and II-VI semiconductor substrates and Ge or Si overlayers. A comparison is made between our measured discontinuities and the predictions of current theoretical models. We find the best agreement with empirically corrected versions of the models of Harrison and of Frensley and Kroemer. However, we present a new empirical rule based on our present results and on those of other authors which yields even more accurate predictions of band discontinuities. The measured Fermi-level-pinning position of each substrate is the same for both Ge and Si overlayers. This result is discussed in terms of the “defect model” of Fermi-level pinning, originally developed for Schottky barriers.
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References
A. D. Katnani, R. R. Daniels, Te-Xiu Zhao, and G. Margaritondo, J. Sci. Technol. 20, 662 (1982)
A. D. Katnani, N. G. Stoffel, R. R. Daniels, Te-Xiu Zhao, and G. Margaritondo, J. Vac. Sci. Technol. A 1, 692 (1983).
G. Margaritondo, A. D. Katnani, N. G. Stoffel, R. R. Daniels, and Te-Xiu Zhao, Solid State Commun. 41, 163 (1982).
J. R. Waldrop and R. W. Grant, Phys. Rev. Lett. 26 1686 (1978).
R. W. Grant, J. R. Waldrop, and E. A. Kraut, Phys. Rev. Lett. 40 656 (1979).
J. R. Waldrop, S. P. Kowalczyk, R. W. Grat, E. A. Kraut, and D. L. Miller, J. Vac. Sci. Technol. 19, 573 (1981).
R. L. Anderson, Solid State Electron. 5, 341 (1962).
W. R. Frensley and H. Kroemer, Phys. Rev. B 15, 2642 (1977).
W. Harrison, J. Vac. Sci. Technol. 14, 1016 (1977).
M. J. Adam and Allen Nussbaum, Solid State Electron. 22, 783 (1979).
Oldwig Von Ross, Solid State Electron. 23, 1069 (1980).
W. E. Spicer, P. W. Chye, P. Skeath, C. Y. Su, and I. Lindau, J. Vac. Sci. Technol. 16, 1422 (1979)
W. E. Spicer, I. Lindau, P. Skeath, and C. Y. Su, ibid. 17, 1019 (1980).
A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions (Academic, New York, 1972).
W. G. Oldham and A. G. Milnes, Solid State Electron. 7, 153 (1964)
J. Jerhot and V. Snejdar, Phys. Status Solidi A 34, 505 (1976).
H. C. Card, J. Appi. Phys. 50, 2822 (1979).
H. Kroemer, CRC Crit. Rev. Solid State Sci. 5, 555 (1975).
G. A. Baraff, Joel A. Appelbaum, and D. R. Hamann, Phys. Rev. Lett. 38, 237 (1977).
Warren Pickett, Steven G. Louis, and Marvin Cohen, Phys. Rev. Lett. 19, 109 (1977); Phys. Rev. B 17, 815 (1978).
C. A. Swarts, W. A. Goddard, and T. G. McGill, J. Vac. Sci. Technol. 19, 551 (1981).
J. Pollman and S. Pantelides, J. Vac. Sci. Technol. 16, 1498 (1979).
P. Perfetti, D. Denley, K. A. Mills, and D. A. Shirley, Appi. Phys. Lett. 33, 66 (1978).
R. S. Bauer and J. C. McMenamin, J. Vac. Sci. Technol. 15, 1444 (1978).
W. Monch and H. Gant, J. Vac. Sci. Technol. 17, 1094 (1980).
D. Denley, K. A. Mills, P. Perfetti, and D. A. Shirley, J. Vac. Sci. Technol. 16, 1501 (1979).
P. Zurcher, G. J. Lapeyre, J. Anderson, and D. Frankel, J. Vac. Sci. Technol. 21, 476 (1982).
P. Perfetti, N. G. Stoffel, A. D. Katnani, G. Margaritondo, C. Quaresima, F. Patella, A. Savoia, C. M. Bertoni, C. Calandra, and F. Manghi, Phys. Rev. B 24, 6174 (1981)
G. Margaritondo, N. G. Stoffel, A. D. Katnani, H. S. Edelman, and C. M. Bertoni, J. Vac. Sci. Technol. 18, 290 (1981)
G. Margaritondo, N. C. Stoffel, A. D. Katnani, and F. Patella, Solid State Commun. 36, 215 (1980).
S. P. Kowalczyk, W. J. Schlaffer, E. A. Kraut, and R. W. Grant, J. Vac. Sci. Technol. 2Q, 705 (1981).
S. P. Kowalczyk, E. A. Kraut, J. R. Waldrop, and R. W. Grant, J. Vac. Sci. Technol. 21, 482 (1982).
E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. Lett. 44, 1620 (1980).
R. H. Williams, R. R. Varma, and V. Montegomery, J. Vac. Sci. Technol. 16, 1143 (1979).
P. Skeath, I. Lindau, P. W. Chye, C. Y. Su, and W. E. Spicer, J. Vac. Sci. Technol. 16 1143 (1979).
L. J. Brillson, C. F. Brucker, N. G. Stoffel, A. D. Katnani, and G. Margaritondo, Phys. Rev. Lett. 46, 838 (1981).
M. S. Daw and D. L. Smith, Phys. Rev. B 20, 5150 (1979); Appl. Phys. Lett. 36, 690 (1980).
J. D. Dow and R. E. Allen, J. Vac. Sci. Technol. 20, 659 (1982)
W. Monch, R. S. Bauer, H. Gant, and R. Murschall, J. Vac. Sci. Technol. 21, 498 (1982).
I. Lindau and W. E. Spicer, J. Electron Spectrosc. Relat. Phenom. 3,409(1974).
F. F. Fang and W. H. Howard, J. Appl. Phys. 11, 3 (1964).
P. Zurcher and R. S. Bauer, J. Vac. Sci. Technol. A 1, 695 (1983).
A. D. Katnani and G. Margaritondo, J. Appl. Phys. 5, 2522 (1983)
G. Margaritondo, Solid State Electron. 26, 499 (1983)
L. J. Brillson, Surf. Sci. Rep. 2, 123 (1982).
Monch and H. Gant, Phys. Rev. Lett. 48, 512 (1982).
A. D. Katnani, G. Margaritondo, R. E. Allen, and J. D. Dow, Solid State Commun. 44, 1231 (1982).
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Katnani, A.D., Margaritondo, G. (1988). Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriers. In: Margaritondo, G. (eds) Electronic Structure of Semiconductor Heterojunctions. Perspectives in Condensed Matter Physics, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3073-5_32
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DOI: https://doi.org/10.1007/978-94-009-3073-5_32
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