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Mechanistic Aspects of Semiconductor Photoelectrochemistry: The Behavior of Si and GaAs in Nonaqueous Solvents

  • Chapter
Homogeneous and Heterogeneous Photocatalysis

Part of the book series: NATO ASI Series ((ASIC,volume 174))

Abstract

Kinetic methods for identification of the dominant recombination mechanism of photogenerated carriers can yield important information concerning the current-voltage behavior of semiconductor/ liquid junctions. We describe here the application of these techniques to systems based on n-Si and n-GaAs photoelectrodes. The use of nonaqueous solvents and outer sphere redox couples allows separation of the overpotential losses associated with fuel formation from losses inherent to the solid/solvent junction itself. Control over surface chemical interactions in both liquid and Schottky junctions can be attained by photoelectrochemical treatments to reduce interface recombination processes. Calculations of the theoretical upper limit on the photovoltage for a given semiconductor/liquid interface can be useful in assessing the prospects for improved current-voltage performance in response to surface modification procedures.

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Author information

Authors and Affiliations

  1. Department of Chemistry, Stanford University, Stanford, CA, 94305, USA

    Nathan S. Lewis, Mary L. Rosenbluth, Louis G. Casagrande & Bruce J. Tufts

Authors
  1. Nathan S. Lewis
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  2. Mary L. Rosenbluth
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  3. Louis G. Casagrande
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  4. Bruce J. Tufts
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Editor information

Editors and Affiliations

  1. Department of Analytical Chemistry, University of Turin, Turin, Italy

    Ezio Pelizzetti

  2. Department of Chemistry, Concordia University, Montreal, Canada

    Nick Serpone

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© 1986 D. Reidel Publishing Company

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Lewis, N.S., Rosenbluth, M.L., Casagrande, L.G., Tufts, B.J. (1986). Mechanistic Aspects of Semiconductor Photoelectrochemistry: The Behavior of Si and GaAs in Nonaqueous Solvents. In: Pelizzetti, E., Serpone, N. (eds) Homogeneous and Heterogeneous Photocatalysis. NATO ASI Series, vol 174. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4642-2_21

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  • DOI: https://doi.org/10.1007/978-94-009-4642-2_21

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-277-2221-8

  • Online ISBN: 978-94-009-4642-2

  • eBook Packages: Springer Book Archive

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