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Envelope Function Approach to the Superlattices Band Structure

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Molecular Beam Epitaxy and Heterostructures

Part of the book series: NATO ASI Series ((NSSE,volume 87))

Abstract

The superlattices are artificial semiconductors obtained by stacking alternatively layers of two host semiconductors A and B. In this lecture we incorporate the superlattice effect into a Kane type analysis of the hosts band structure assuming flat band condition. Various limits are analyzed and specific examples are presented. We also discuss the in-plane electron motion within an approximate scheme. Optical selection rules for interband transitions are derived and we show that in type II structures (e.g. InAs-GaSb) the optical matrix element strongly depends on the superlattice wavevector. Impurities and excitons effects in isolated quantum wells are briefly outlined.

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Author information

Authors and Affiliations

  1. Groupe de Physique des Solides de l’Ecole Normale Superieure, 24 rue Lhomond, 75231, Paris Cedex 05, France

    G. Bastard

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  1. G. Bastard
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Editor information

Editors and Affiliations

  1. IBM T.J. Watson Research Center, Yorktown Heights, 10598, NY, USA

    Leroy L. Chang

  2. Max-Planck-lnstitute, D-7000, Stuttgart 80, Germany

    Klaus Ploog

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© 1985 Martinus Nijhoff Publishers, Dordrecht

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Bastard, G. (1985). Envelope Function Approach to the Superlattices Band Structure. In: Chang, L.L., Ploog, K. (eds) Molecular Beam Epitaxy and Heterostructures. NATO ASI Series, vol 87. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-5073-3_11

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  • DOI: https://doi.org/10.1007/978-94-009-5073-3_11

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-8744-5

  • Online ISBN: 978-94-009-5073-3

  • eBook Packages: Springer Book Archive

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