Abstract
Some important and topical aspects of non-crystalline semiconductors are considered with emphasis on the two most extensively studied groups of materials, namely the tetrahedrally coordinated elements, in particular a-Si:H, and the chalcogenides. Intrinsic disorder, characteristic of continuous random network models of their structures, is distinguished from specific point defects. The former leads to localized electronic states in band tails and a relaxation of k-conservation selection rules for interband optical transitions. The latter produce states in the gap and these are shown to be fundamentally different in the two classes of material. Various experimental techniques and results which provide information on the nature and distribution of the electronic states are described.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Zallen, R. 1983, The Physics of Amorphous Solids (Wiley).
Tiedje, T., Abeles, B. and Cebulka, J.M. 1983, Solid State Commun. 47, p. 493
Roxlo, C.B., Abeles, B., Wronski, C.R., Cody, G.D., and Tiedje, T. 1983, Ibid. 47, p. 985.
Vanderbilt, D. and Joannopoulos, J.D. (to be published), Proceedings of the 10th International Conference on Amorphous and Liquid Semiconductors, Tokyo 1983.
Adler, D. and Yoffa, E.J. 1976, Phys. Rev. Lett. 36, p. 1197.
Tiedje, T. and Rose, A. 1980, Solid State Commun. 37, p.49.
Tiedje, T., Cebulka, J.M., Morel, D.L. and Abeles, B. 1981, Phys. Rev. Lett. 46, p. 1425.
Marshall, J.M., Michiel, H. and Adriaensses, G.J. 1983, Phil. Mag. B 47, p. 211
Michiel, H., Marshall, J.M. and Adriaensses, G.J. 1983, Ibid. 48, p. 187.
Street, R.A. 1982, Appl. Phys. Lett. 41. p. 1060.
Street, R.A., Zesch, J. and Thompson, M.J. (in press) Appl. Phys. Lett.
Madan, A., Le Comber, P.G. and Spear, W.E. 1976, J. Non-Crystalline Solids 20, p. 239
Madan, A. and Le Comber, P.G. 1977, Proceedings of the 7th International Conference on Amorphous and Liquid Semiconductors, Edinburgh 1977 (CICL, University of Edinburgh 1977) p. 377.
Cohen, J.D., Lang, D.V., Harbison, J.P. and Sergent, A.M. 1983, Solar Cells 9, p. 119.
Dersch, H., Stuke, J. and Beichler, J. 1981, Phys. Stat. Sol. (b) 105, p. 265.
Street, R.A. 1981, Adv. in Phys. 30, p. 598.
Street, R.A., Biegelsen, D.K. and Zesch, J. 1982, Phys. Rev. B 25, p. 4334
Cavenett, B.C., Depinna, S.P., Austin, I.G. and Searle, T.M. 1983, Phil. Mag. B 48, p. 169.
Street, R.A., 1976, Adv. in Phys. 215, p. 397.
Davis, E.A. 1979, in Topics in Applied Physics: Vol. 36 Amorphous Semiconductors, Ed.: Brodsky, M.H. (Springer- Verlag), p. 41.
Davis, E.A., 1980, Proceedings of the 15th International Conference on the Physics of Semiconductors, Kyoto 1980, J. Phys. Soc. Japan 49, p. 1139; 1981, Proceedings of the 9th International Conference on Amorphous and Liquid Semiconductors, Grenoble 1981, J.de Physique 42, p. C4–855.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1984 D. Reidel Publishing Company, Dordrecht, Holland
About this chapter
Cite this chapter
Davis, E.A. (1984). Electronic Properties of Non-Crystalline Semiconductors. In: Acrivos, J.V., Mott, N.F., Yoffe, A.D. (eds) Physics and Chemistry of Electrons and Ions in Condensed Matter. NATO ASI Series, vol 130. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-6440-2_17
Download citation
DOI: https://doi.org/10.1007/978-94-009-6440-2_17
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-009-6442-6
Online ISBN: 978-94-009-6440-2
eBook Packages: Springer Book Archive