Summary
A novel technique for the deposition of a-Si:H by a double ion-gun sputtering apparatus is described. Properties of some preliminary samples prepared by this method are discussed. A procedure for gap-state spectroscopy by photoconductivity measurements has been developed and tested on glow-discharge samples. It is shown that there is a close correspondence between gap-state density and recombination kinetics. Some preliminary work on Schottky-barrier cells is reported.
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References
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© 1983 ECSC, EEC, EAEC, Brussels and Luxembourg
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Coluzza, C. et al. (1983). Preparation, Study and Characterization of Hydrogenated Amorphous Silicon for Photovoltaic Cells. In: Van Overstraeten, R., Palz, W. (eds) Photovoltaic Power Generation. Solar Energy R&D in the European Community, vol 3. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-7136-3_25
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DOI: https://doi.org/10.1007/978-94-009-7136-3_25
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-009-7138-7
Online ISBN: 978-94-009-7136-3
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