Summary
A large interest is now focused on polyacetylene material, since this simple conjugated polymeric system can be doped by various chemical species and its electrical conductivity is increased by more than twelve order of magnitude by doping processes. P and n type dopants are available such as I2, SbF5 or Na, K. By dopant concentration increase a semiconducting or quasi metallic state are obtained. The optical properties, such as a gap near 1,5 eV, with an absorption coefficient of more than 105 cm−1 around the gap should allow, in the future to use this material especially in photovoltaic cells. This new organic material is obtained at a low cost and very large surface are easily available. Thereafter this material is very sensitive to oxygene and must be protected by an adequate coating.
We present here studies of p-type doped (CH)x. Dopant profiles are directly determined and SbF5 diffusion coefficient deduced. Electrical conductivity is also pointed out exhibiting semiconductor-metal transition. Optical properties and first device applications for p-type(CH)x thin films deposited on conducting glass or CdS layers, tare then reported.
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© 1981 ECSC, EEC, EAEC, Brussels and Luxembourg
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Rolland, P.M., Cadene, M., Aldissi, M., Bernier, P. (1981). New Organic Material for Electronic Device Improvement. In: Palz, W. (eds) Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-8423-3_157
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DOI: https://doi.org/10.1007/978-94-009-8423-3_157
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-009-8425-7
Online ISBN: 978-94-009-8423-3
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