Abstract
Substrates containing buried dielectric prepared by separation by implantation of oxygen (SIMOX) are promising for use in complementary metal oxide semiconductor (CMOS) applications where the reduced capacitance and high packing density of the MOS devices allow to reach higher operation speed and lower power consumption. The stability and long-term reliability of devices based on SIMOX technology are limited by the electrical properties of the buried oxide (BOX), especially, of silicon film—buried oxide and buried oxide-silicon substrate interfaces. It was mentioned in [1] that at low temperatures the role of hot carrier effects greatly increases, which can lead to device degradation, especially for interfaces with poor electrical properties. So, in order to take full advantage of the attractive features of this technology, the aforementioned properties require more research. Low temperature measurements make it possible to study shallow interface levels with activation energies of some meV situated in the thin nonstoichiometric transition layer. These traps are responsible for hysteresis of n-channel transistor drain characteristics at low temperatures [2]. In this paper, we present further insight into the trapping properties of the buried oxide.
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© 2002 Springer Science+Business Media Dordrecht
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Lysenko, V.S., Tyagulski, I.P., Osiyuk, I.N., Gomeniuk, Y.V. (2002). Cryogenic Investigations of SIMOX Buried Oxide Parameters. In: Balestra, F., Nazarov, A., Lysenko, V.S. (eds) Progress in SOI Structures and Devices Operating at Extreme Conditions. NATO Science Series, vol 58. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0339-1_11
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DOI: https://doi.org/10.1007/978-94-010-0339-1_11
Publisher Name: Springer, Dordrecht
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