Abstract
Downsizing of the active region of semiconductor lasers to zero dimension has different effects on static and dynamic laser parameters. Due to the thermodynamics of low dimensional electron hole plasmas the most prominent effects are the threshold reduction and the improved temperature stability. Based on the changed density of states also effects on the modulation response and beam quality of the laser are theoretically expected but not yet demonstrated. This obvious discrepancy between theoretical expectations and experimental results must be related to additional effects as carrier transport and relaxation. After a brief review of nano fabrication aspects of dot lasers as self assembled methods as well as lithography based implantation and etching methods, laser device properties based on thermodynamics in low dimensional systems will be discussed. Strong emphasis will be put on carrier dynamics (transport, recombination, and relaxation). On the footing of a rate equation approach we discuss the static and dynamic properties of quantum dot lasers as a function of the dot array filling factor. Also some applications and device properties will be discussed. Based on periodic dot arrays gain coupled dot distributed feedback lasers can be realized which result in an improved side mode suppression ratio of the laser emission. From modulation experiments extremely low dynamic chirp of dot lasers can be observed making quantum dot lasers possibly promising candidates for high speed communication in the long wavelength range if modulation response limitations can be solved.
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Schweizer, H. et al. (2000). Quantum Dot Lasers. In: Pavesi, L., Buzaneva, E. (eds) Frontiers of Nano-Optoelectronic Systems. NATO Science Series, vol 6. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0890-7_5
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DOI: https://doi.org/10.1007/978-94-010-0890-7_5
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