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Ion Beam Processing for Silicon-on-Insulator

  • Chapter
Physical and Technical Problems of SOI Structures and Devices

Part of the book series: NATO ASI Series ((ASHT,volume 4))

Abstract

During the last few years ion beam processing penetrated very aggressively in many branches of advanced solid state technology. This holds also for the modern semiconductor technology in the area of VLSI (Very Large Scale Integration) and ULSI (Ultra Large Scale Integration). SOI (Silicon-on-Insulator) is one of the most discussed candidates of this branch offering the possibility to produce integrated circuits of high packing density, low power consumption and high speed.

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Author information

Authors and Affiliations

  1. Institute of Ion Beam Physics and Materials Research, Research Center Rossendorf Inc., P.O.B. 51 01 19, D-01314, Dresden, Germany

    Wolfgang Skorupa

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  1. Wolfgang Skorupa
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Editor information

Editors and Affiliations

  1. Maxwell-DICE, Université Catholique de Louvain, Place du Levant 3, 1348, Louvain-la-Neuve, Belgium

    J. P. Colinge

  2. Institute of Semiconductor Physics, Ukrainian Academy of Sciences, Pr. Nauki 45, 252028, Kiev, Ukraine

    A. N. Nazarov

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© 1995 Springer Science+Business Media Dordrecht

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Skorupa, W. (1995). Ion Beam Processing for Silicon-on-Insulator. In: Colinge, J.P., Lysenko, V.S., Nazarov, A.N. (eds) Physical and Technical Problems of SOI Structures and Devices. NATO ASI Series, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0109-7_4

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  • DOI: https://doi.org/10.1007/978-94-011-0109-7_4

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4052-5

  • Online ISBN: 978-94-011-0109-7

  • eBook Packages: Springer Book Archive

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