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Semi-Insulating Oxygen-Doped Silicon by Low Temperature Chemical Vapor Deposition for SOI Applications

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Physical and Technical Problems of SOI Structures and Devices

Part of the book series: NATO ASI Series ((ASHT,volume 4))

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Abstract

In this paper the growth of crystalline silicon layers with large amounts of oxygen (~1020 cm−3) by low temperature chemical vapor deposition is described. These layers have semi-insulating electrical properties with resistivities as large as 106 Ω-cm at room temperature and exhibit the classic characteristics of a space-charge limited current in an insulator with many deep traps. Single crystal SOI layers without oxygen were grown on top of the semi-insulating layers. P-channel MOSFET’s fabricated in these films had characteristics above threshold similar to bulk control samples, although their subthreshold characteristics were degraded.

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Author information

Authors and Affiliations

  1. Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA

    J. C. Sturm

  2. Department of Electrical and Computer Engineering, University of Iowa, Iowa City, IA, 52242, USA

    P. V. Schwartz

  3. Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, 62/203, Berkeley, CA, 94720, USA

    Z. Liliental-Weber

Authors
  1. J. C. Sturm
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  2. P. V. Schwartz
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  3. Z. Liliental-Weber
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Editor information

Editors and Affiliations

  1. Maxwell-DICE, Université Catholique de Louvain, Place du Levant 3, 1348, Louvain-la-Neuve, Belgium

    J. P. Colinge

  2. Institute of Semiconductor Physics, Ukrainian Academy of Sciences, Pr. Nauki 45, 252028, Kiev, Ukraine

    A. N. Nazarov

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© 1995 Springer Science+Business Media Dordrecht

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Sturm, J.C., Schwartz, P.V., Liliental-Weber, Z. (1995). Semi-Insulating Oxygen-Doped Silicon by Low Temperature Chemical Vapor Deposition for SOI Applications. In: Colinge, J.P., Lysenko, V.S., Nazarov, A.N. (eds) Physical and Technical Problems of SOI Structures and Devices. NATO ASI Series, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0109-7_5

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  • DOI: https://doi.org/10.1007/978-94-011-0109-7_5

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4052-5

  • Online ISBN: 978-94-011-0109-7

  • eBook Packages: Springer Book Archive

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