Abstract
The present paper is dedicated to the simulation of phosphorus entering into diamond and its influence upon the vacancy in diamond, using the theory of shallow donor states and the tight-binding theory (TBT).
We’re sorry, something doesn't seem to be working properly.
Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.
We’re sorry, something doesn't seem to be working properly.
Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.
Keywords
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
References
Popovici G. and Prelas M.A.(1994) Forced methods of diamond doping. Second Int. Symp. on Diamond Films, May 3–5, 1994, Minsk, Belarus, 16.
Spitsyn B. (1994) Chemical problems of diamond doping. NATO Advanced Workshop on Wide Bandgap Electronic Materials,May 4–6, Minsk, Belarus, 164.
Samsonenko N.,Tokiy V.,Gorban S.and Timchenko V. (1991) Electron spin resonance spectroscopy of impure and pure structural defects in diamond.Surf.and Coat.Technol. 47, 618–622.
Samsonenko N.,Tokiy V. and Gorban S. (1991) Electron paramagnetic resonance of phosphorus in diamond. Sov.Phys. Solid State. 33, 1409–1411.
Tokiy V.,Samsonenko N. and Gorban S. (1991) The electronic structure of phosphorus in diamond. Abstr.XIII AIRAPT Int. Conf.on High Science and Technol.,Bangalor, p.A–10.
Harrison W.A.,(1989) Electronic Structure and the Properties of Solids ,Freeman,San Francisco,1980,reprinted by Dover, New York, 1989.
Harrison W.A. (1990) Interatomic interactions covalent and ionic solids. Phys.Rev., B 41, 6008–6019.
Levin A. (1974) Solid State Quantum Chemistry, McGraw-Hill, New York.
Messmer, R.P. and Watkins, G.D. (1973) Molecular Orbital Treatment for Deep Levels in Semiconductors: Substitutional Nitrogen and the Lattice Vacancy in Diamond. Phys.Rev. B7, 2568–2590.
Atkins P.W., Symons M.C.R. (1967) The Structure of Inorganic Radicals, Elsevier, Amsterdam .
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1995 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Tokiy, V.V., Savina, D.L. (1995). Calculations of Phosphorous Electronic Levels in Diamond. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_10
Download citation
DOI: https://doi.org/10.1007/978-94-011-0173-8_10
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-4078-5
Online ISBN: 978-94-011-0173-8
eBook Packages: Springer Book Archive
Publish with us
We’re sorry, something doesn't seem to be working properly.
Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.