Abstract
Surface selective growth of III–V epitaxial structures is of considerable interest for the monolithic integration of electronic and optoelectronic devices. Early attempts at combining discrete devices on a single chip (e.g. PIN-FETs) employed a ‘vertical integration’ approach in which two or more device structures were grown one on top of the other but more complex circuits require ‘planar integration’ in which the devices are grown side-by-side by selective area epitaxy (SAE).
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© 1995 Springer Science+Business Media Dordrecht
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Foord, J.S., Levoguer, C.L., Davies, G.J. (1995). Molecular Processes for Surface Selective Growth on Patterned Substrates; An Investigation of CBE ALAS Deposition. In: Eberl, K., Petroff, P.M., Demeester, P. (eds) Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. NATO ASI Series, vol 298. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0341-1_22
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DOI: https://doi.org/10.1007/978-94-011-0341-1_22
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