Abstract
ZnO was HIPed at 1250°C in Ar for 2h under various pressures from 50MPa to 200MPa. Almost all the pores were eliminated at a pressure higher than 130MPa. The HIPed sample was transparent. The maximum transmittance was 47% at 800nm (0.8mm thick). The grain size increased during HIP. This grain growth may be caused by elimination of pores. The changes of the transmittance and electrical resistance of the samples before and after annealing showed that the effect of reduction during HIP was not so significant.
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© 1992 Elselvier Science Publishers Ltd
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Watanabe, A. et al. (1992). HIP of ZnO. In: Koizumi, M. (eds) Hot Isostatic Pressing— Theory and Applications. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2900-8_17
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DOI: https://doi.org/10.1007/978-94-011-2900-8_17
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-85166-744-4
Online ISBN: 978-94-011-2900-8
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