Abstract
This paper reports on sacrificial oxide etching with very high selectivity to aluminium metallization using mixtures of 73% HF and IPA. Etch rate ratios up to 680 have been achieved even for (slow etching) thermal oxide. Thermal oxide etch rates up to 1.8μm/min. are reported. Thick polysilicon accelerometers with aluminium metallization and thermal sacrificial oxide have been made as well as full aluminium microstructures using plasma oxide as sacrificial layer.
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© 1998 Springer Science+Business Media Dordrecht
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Gennissen, P.T.J., French, P.J. (1998). Sacrificial Oxide Etching Compatible with Aluminium Metallization. In: van den Berg, A., Bergveld, P. (eds) Sensor Technology in the Netherlands: State of the Art. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5010-1_31
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DOI: https://doi.org/10.1007/978-94-011-5010-1_31
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