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Nonvolatile Field-Effect Transistors Using Ferroelectric Doped HfO2 Films

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Ferroelectric-Gate Field Effect Transistor Memories

Part of the book series: Topics in Applied Physics ((TAP,volume 131))

Abstract

Ferroelectrics are ideal for low power digital information storage since they can be switched purely field controlled with negligible current consumption and at the same time are nonvolatile. However, the incompatibility of classical ferroelectric materials with semiconductor technology has hindered the scaling of ferroelectric memory devices. Therefore, such devices are only used in niche applications today. In 2011, first reports indicated that hafnium oxide, which is a standard material in modern CMOS processes, can be transformed into a ferroelectric phase. Moreover, the specific properties such as much lower permittivity compared to classical perovskite based ferroelectrics and high coercive fields enable to realize scaled ferroelectric field effect transistors that show nonvolatile retention. Therefore, ferroelectric hafnium oxide can help to finally fully exploit the potential of ferroelectric memories. In this chapter, we will first show the basics of ferroelectric hafnium oxide. Then, the current understanding of the origin and technological parameters influencing the ferroelectricity in hafnium oxide are discussed. Finally, the current status and future prospects of a ferroelectric field effect transistor based memory technology are summarized.

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Acknowledgments

The authors like to thank the FeFET team at Qimonda, Fraunhofer IPMS-CNT, GlobalFoundries, RWTH Aachen, Munich University of Applied Science, and NaMLab for their contribution to the results.

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Authors and Affiliations

  1. Nanoelectronic Materials Laboratory—NaMLab gGmbH, Noethnitzer Strasse 64, 01187, Dresden, Germany

    Uwe Schroeder, Stefan Slesazeck & Thomas Mikolajick

  2. IHM, Technische Universitaet Dresden, Noethnitzer Strasse 64, 01187, Dresden, Germany

    Thomas Mikolajick

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  1. Uwe Schroeder
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  2. Stefan Slesazeck
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Correspondence to Uwe Schroeder .

Editor information

Editors and Affiliations

  1. Electrical and Computer Engineering, University of Seoul Electrical and Computer Engineering, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Cen, Tokyo Institute of Technology Frontier Collaborative Research Cen, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Scie, Osaka University Graduate School of Engineering Scie, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science&Tech (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information & Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Schroeder, U., Slesazeck, S., Mikolajick, T. (2016). Nonvolatile Field-Effect Transistors Using Ferroelectric Doped HfO2 Films. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Dordrecht. https://doi.org/10.1007/978-94-024-0841-6_3

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  • DOI: https://doi.org/10.1007/978-94-024-0841-6_3

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  • Online ISBN: 978-94-024-0841-6

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