Abstract
The STT (spin-transfer torque) has emerged as a promising memory technology to provide energy efficient, non-volatile, high density memories with low power dissipation and unlimited endurance. In addition, it offers CMOS compatible architectures with high-speed read and write operations. During the initial phase of the development, researchers envisaged the greater potential of the STT based magnetic random access memory (MRAM) to become an alternate solution of the contemporary memory technologies.
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Kaushik, B.K., Verma, S., Kulkarni, A.A., Prajapati, S. (2017). Spin Orbit Torque MRAM. In: Next Generation Spin Torque Memories. SpringerBriefs in Applied Sciences and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-10-2720-8_3
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DOI: https://doi.org/10.1007/978-981-10-2720-8_3
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