Abstract
Phase change memory has great potential for numerous attractive applications, especially in storage class memory, on the premise of its high-device performances, which still need to be improved by employing a material with good overall phase change properties. This chapter presents Ti-doped Sb-Te phase change materials in the hope of balancing the thermal stability and the operation rate of phase change memory. The component of Sb-Te is optimized. Compared to Ti-doped Sb2Te and Sb4Te alloy, Ti-doped Sb2Te3 has been proved to be the best candidate in respect of resistance ratio and device lifetime.
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Zhu, M. (2017). Component Optimization of Sb–Te for Ti–Sb–Te Alloy . In: Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications. Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-10-4382-6_2
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