Abstract
Layout decomposition is a basic step in mask data preparation in e-beam lithography (EBL) writing. For larger throughput in EBL, L-shape-writing technique has recently been developed. It is termed as L-shape fracturing, similar in line with rectangular fracturing. However, implementation of this new technique may yield very thin/narrow features called slivers. For better manufacturability, it is preferable to minimize the overall sliver length. In this paper we propose a novel scheme based on Hausdorff distance metrics for L-shape fracturing with inherent sliver minimization. The proposed scheme starts with finding the concave corner vertices of input layout, and attempts to find a balanced partition of this set of concave corner points of the given layout. Subsequently, Hausdorff distance-based layout fracturing is performed. Experimental results demonstrate efficacy of our proposed algorithm.
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Sinharay, A., Roy, P., Rahaman, H. (2017). Hausdorff Distance Driven L-Shape Matching Based Layout Decomposition for E-Beam Lithography. In: Kaushik, B., Dasgupta, S., Singh, V. (eds) VLSI Design and Test. VDAT 2017. Communications in Computer and Information Science, vol 711. Springer, Singapore. https://doi.org/10.1007/978-981-10-7470-7_29
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DOI: https://doi.org/10.1007/978-981-10-7470-7_29
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