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Polymorphism of Hafnia-Based Ferroelectrics for Ferroelectric Field-Effect Transistors

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Ferroelectric-Gate Field Effect Transistor Memories

Part of the book series: Topics in Applied Physics ((TAP,volume 131))

Abstract

In this chapter, the thermodynamic and kinetic origins of the unexpected ferroelectric phase formation in emerging fluorite-structure oxides such as HfO2 and ZrO2 are discussed. Various thermodynamic factors, such as doping, stress, and surface/interface/grain boundary energies, could affect the relative free energies of crystalline phases. However, several phenomena including the effects of annealing temperature could not be explained by thermodynamic factors. In this regard, a kinetic mechanism was recently suggested to understand the metastable ferroelectric phase formation. Previous studies on the mechanism of the ferroelectric phase formation are comprehensively critically reviewed to understand the unexpected ferroelectric phase formation.

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Acknowledgements

This research was supported by the Basic Science Research Program through the National Research Foundation (NRF) of Korea, grant-funded by the Ministry of Education (NRF-2018R1C1B5086580) and by the Global Frontier Program through the Global Frontier Hybrid Interface Materials of the NRF of Korea funded by the Ministry of Science and ICT (2013M3A6B1078874).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Pusan National University, Busandaehak-ro-63-beon-gil 2, Busan, 46241, South Korea

    Min Hyuk Park

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  1. Min Hyuk Park
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Correspondence to Min Hyuk Park .

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Editors and Affiliations

  1. School of Electrical and Computer Engineering, University of Seoul, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Science, Osaka University, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information and Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Park, M.H. (2020). Polymorphism of Hafnia-Based Ferroelectrics for Ferroelectric Field-Effect Transistors. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Singapore. https://doi.org/10.1007/978-981-15-1212-4_18

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